Effect of (Hg) on the Electrical and Structural Properties of High Temperature Bi2Ba2Ca2Cu3O10+δ Superconductor

Abstract

This work investigates how the preparation process affects the electrical characteristics of the superconducting ceramic compound (Bi_2-x(Hg_X) BaCa_1.85(Sb_0.15)Cu₃O_10+δ) by partially substituting (Hg) for (Bi), where x = (0, 0.1, 0.2, 0.3, 0.4). In order to achieve the highest critical transfer temperature (High-Tc) using the most efficient preparation technique, the study aims to investigate the conditions and optimal approach for achieving stability. In order to produce a conjugated material and promote an ideal progressive diffusion process among the atoms, the samples were created under ideal conditions using the solid-state reaction (SSR) method. We found the critical transition temperatures and energy gap values for the samples (x=0, 0.1, 0.2, 0.3, 0.4) by using the Four-Probe Technique to examine the resistance variation of the samples as a function of temperature. The samples showed metallic characteristics and superconducting behavior at 780° C. The SSR approach was used to create the ideal sample, which had a composition of x = 0.4 and a critical transition temperature of Tc = 122 K. In addition to outperforming other samples in terms of obtaining superconducting compounds with superior transition temperatures, this sample also showed the highest energy gap value of Eg = 0.037144 eV and a hole concentration of P(hole) = 0.16. AFM (atomic force microscopy) was also used to examine the surfaces of these systems. Through it, the average diameter (nm), average roughness (Ra), and root mean square (Rg) were calculated. The results showed that the sample with the replacement ratio (0.4) had the bast average diameter of (608.8).