Synthesis and Characterization of Nanostructure of Ag doped ZnO/P-Si Detectors Prepared by CBD Method

Abstract

In this work, nanostructured zinc oxide were doped with various silver doping ratios of 0%, 2%, 4%, and 8%. The nanorods were grown on silicon wafers using the chemical bath deposition (CBD) method. Aluminum contacts were evaporated onto the prepared samples using a thermal evaporation technique. Al/Ag:ZnO/Si/Al detectors were produced according to the above ratios, and were named as X1, X2, X3, and X4, respectively. The structural properties and surface morphology of the fabricated detectors were studied. The effect of (I-V) and (I-T) was also studied at a room temperature. The current values at UV wavelengths of 365 nm and 385 nm showed a distinct difference between the synthesized detectors. The photosensitivity values of the detectors based on Ag:ZnO composition (i.e. 0%, 2%, 4%, and 8%) under an applied source voltage of 5 V for samples X1, X2, X3, and X4 were 413%, 9722%, 2055% and 753% at a wavelength of 365 nm, and 444%, 4810%, 930% and 602% at a wavelength of 385 nm in UV light and a power density of 40 μW/cm², respectively. By calculating the rise and decay time for each sample and at each UV wavelength of 365 nm and 385 nm, it was found that the effect of doping was effective and good in improving and developing the prepared detectors. All detectors exhibited stability and high-speed response, especially for the extinction time.