Effect of preparation temperature of titanium dioxide deposited on Si wafers on the UV response of the detector

Abstract

In this study, nanocomposite films of titanium oxide (TiO₂) were prepared on Si plates by hydrothermal method at high temperatures (i.e.150 °C, 160 °C and 170 °C) with the concentration of titanium oxide was fixed at 0.75 ml and the deposition time constant at 6 h. These films were prepared by adding 0.75 ml of titanium butoxide (TiO₂), 20 ml of hydrochloric acid and 40 ml of deionized water. The heat treatment was carried out at 450 °C for 2 hrs. UV-vis tests were performed on FTO samples (T1, T2 and T3) at different temperatures, when the absorbance and energy gaps of the samples were studied. XRD examinations showed the peaks of each sample, and FESEM images also showed the shapes of nanorods for all samples. With using a photoluminescence device, it was found that the photoluminescence value was concentrated at (415 - 405 nm) in the samples prepared with TiO₂, and its intensity was observed to increase with increasing temperature. Si/TiO2 photodetectors prepared at different temperatures. The sensitivity (844%, 500% and 440%) and photoresponse (0.0152, 0.0075 and 0.00585 A/W) were obtained for the temperatures (150 °C, 160 °C and 170 °C), respectively. These parameters were calculated using UV light with a wavelength of 385 nm and an intensity of 0.05 mW/cm² at a room temperature, applying a bias voltage of 3 V, consistent with the electrical configuration used during photoresponse measurements with an on time of 20 s and off time of 20 s. These rays were incident perpendicularly on the photodetectors at a distance of 5 cm. In this study, we will focus on the best results obtained from the measurements.