Effect of Sputtering pressure and partial pressure on Structural Properties of TiO2thin Films
Abstract
Effect of sputtering pressure and partial pressure on structural properties of TiO2 films prepared using DC-sputtering to glass substrate was investigated. sputtering pressures are changed (1.8,2.8,3.8,4.3 pa) at constant O2 /Ar Ratio(5%). Measurements reveal that the TiO2 films at the sputtering pressure 1.8 pa is amorphous , while at increasing pressure to 2.8 pa becomes crystalline with Rutile phase (110) and when we increase the pressure to 4.3 pa get crystalline structure with anatas phase ( 101) .Grain size is calculated per crystalline structure of the anatas and rutile (15.7) nm and(14.2) nm respectively. For constant sputtering pressure (2.8pa) and changedO2/Ar Ratio(10% ,15% ,20% ,25% ,30% , 35%),TiO2 thin films are a amorphous, except percentage (25%) is crystalline with anatas phase (101) and with grain size (15.7 nm).Downloads
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2014 Raaed S.Atea, Mahdya A.Yeser
This work is licensed under a Creative Commons Attribution 4.0 International License.
Journal of Kufa-Physics is licensed under the Creative Commons Attribution 4.0 International License, which allows users to copy, to create extracts, abstracts, and new works from the Article, to alter and revise the Article, and to make commercial use of the Article (including reuse and/or resale of the Article by commercial entities), provided the user gives appropriate credit (with a link to the formal publication through the relevant DOI), provides a link to the license, indicates if changes were made and the licensor is not represented as endorsing the use made of the work. The authors hold the copyright for their published work on the JKP website, while KJP is responsible for appreciating citation for their work, which is released under CC-BY-4.0 enabling the unrestricted use, distribution, and reproduction of an article in any medium, provided that the original work is properly cited.