EFFECTE OF THERMAL ANNEALINEG ON THE ELECTRCAL PROPERTIES OF PbS/Si HETEROJUNCTION

Authors

  • ZUHAIR H. JAWAD

Abstract

In this research the electrical properties for heterojunction devices have been improved by process of simple annealing temperature about one hour period. The results have been explained that the influential of analysis process on electrical properties during the clearest improve for devices properties at special temperature .

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Published

2010-12-10

How to Cite

H. JAWAD, Z. (2010). EFFECTE OF THERMAL ANNEALINEG ON THE ELECTRCAL PROPERTIES OF PbS/Si HETEROJUNCTION. Journal of Kufa-Physics, 2(2). Retrieved from https://journal.uokufa.edu.iq/index.php/jkp/article/view/7499

Issue

Vol. 2 No. 2 (2010): JOURNAL OF KUFA – PHYSICS

Section

Peer-reviewed Articles

License

Copyright (c) 2014 ZUHAIR H. JAWAD

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

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