Effect of Different Etching Parameters on Resistivity of Silicon Nano-Material

Authors

  • *Oday A. Abbas
  • Kahtan A. Noman
  • Abbas H. Rahim

Abstract

Silicon nano-material have been prepared in this work via electrochemical (EC) and photoelectrochemical (PEC) etching processes of n and p-type silicon wafers in hydrofluoric (HF) acid of 24.5 % concentration. All conditions preparation such as substrate resistivity, etching time, current density and illumination have been changed to study the effect of these parameters on resistivity of these porous silicon layers.
Introduction

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Published

2009-12-10

How to Cite

A. Abbas, *Oday, A. Noman, K., & H. Rahim, A. (2009). Effect of Different Etching Parameters on Resistivity of Silicon Nano-Material. Journal of Kufa-Physics, 1(2). Retrieved from https://journal.uokufa.edu.iq/index.php/jkp/article/view/7522

Issue

Vol. 1 No. 2 (2009): Journal of Kufa - Physics

Section

Peer-reviewed Articles

License

Copyright (c) 2009 *Oday A. Abbas, Kahtan A. Noman, Abbas H. Rahim

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

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