Preparation of Silicon Nano-Structure by Laser-Induced Etching Process
Abstract
Silicon nano-structure has been prepared in this work via Laser-induced etching process (LIE) on n-type silicon wafer (3 Ω.cm resistivity) in hydrofluoric acid (HF) (24.5 % concentration) at different etching times (5 – 25 min.). The irradiation has been achieved using laser beam of 2W power and 810 nm wavelength. The morphological and photoluminescence characteristics of these material such as porosity, surface morphology and nanocrystallite size have been investigated using scanning electron microscope (SEM), photoluminescence (PL) measurements, and the gravimetric method.Downloads
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2009 Oday A. Abbass
This work is licensed under a Creative Commons Attribution 4.0 International License.
Journal of Kufa-Physics is licensed under the Creative Commons Attribution 4.0 International License, which allows users to copy, to create extracts, abstracts, and new works from the Article, to alter and revise the Article, and to make commercial use of the Article (including reuse and/or resale of the Article by commercial entities), provided the user gives appropriate credit (with a link to the formal publication through the relevant DOI), provides a link to the license, indicates if changes were made and the licensor is not represented as endorsing the use made of the work. The authors hold the copyright for their published work on the JKP website, while KJP is responsible for appreciating citation for their work, which is released under CC-BY-4.0 enabling the unrestricted use, distribution, and reproduction of an article in any medium, provided that the original work is properly cited.
