Structural behavior of RF magnetron sputtered cuprous oxide (Cu2O) films
DOI:
https://doi.org/10.31257/2018/JKP/2020/120206Keywords:
Cuprous Oxide , RF Magnetron Sputtering , Thin filmsAbstract
In this paper a Cu2O thin film, has been deposited using RF sputtering technique, then the thin film has been characterized by XRD, result obtained showed that strongest peak was 61.3967 degree, and FWHM was 0.215 degree, while lattice constant was 4.26 Aº, and the average grain size was 44.87 nm. While AFM analysis showed that the increasing of another four samples temperature led to increase of roughness average from (3.39 to 9.2) nm, root mean square from (3.92 to 10.7) nm and ten points height from (13.7 to 36.3) at 250,300,350 and 400 C respectively. On the other hand granularity cumulation distribution charts showed average diameter has varied from (43.31 to 51.28) nm with grain numbers per line ( 739, to 414) respectively.Downloads
Downloads
Published
How to Cite
Issue
Section
Categories
License
Copyright (c) 2023 Abdalhussain A. Khadayeir, Sarah Imad Al Dahhan, Ali Nadhom Khilkhal
This work is licensed under a Creative Commons Attribution 4.0 International License.
Journal of Kufa-Physics is licensed under the Creative Commons Attribution 4.0 International License, which allows users to copy, to create extracts, abstracts, and new works from the Article, to alter and revise the Article, and to make commercial use of the Article (including reuse and/or resale of the Article by commercial entities), provided the user gives appropriate credit (with a link to the formal publication through the relevant DOI), provides a link to the license, indicates if changes were made and the licensor is not represented as endorsing the use made of the work. The authors hold the copyright for their published work on the JKP website, while KJP is responsible for appreciating citation for their work, which is released under CC-BY-4.0 enabling the unrestricted use, distribution, and reproduction of an article in any medium, provided that the original work is properly cited.