Review on Performance Perspectives of Dielectric Materials Used in Advanced Semiconductor Devices for Various Applications

Authors

  • Firas Natheer Agha Department of Electrical Engineering, College of Engineering, University of Mosul, Iraq https://orcid.org/0000-0002-5107-2229
  • Faris Hassan Taha Department of Medical Equipment Technology Engineering, College of Engineering Technology, Al-Kitab University, Kirkuk, Iraq
  • Billel Smaani Abdelhafid Boussouf University centre of Mila, Mila, Algeria
  • Nawfal Y. Jamil Department of Radiation Techniques, Alnoor University, Mosul, Iraq
  • Nawaz Shafi VIT University, Vellore, Tamil Nadu India

DOI:

https://doi.org/10.30572/2018/KJE/170124

Keywords:

Dielectric materials, HK dielectric, SiO₂, HfO₂, Permittivity

Abstract

Dielectric materials are important for use in micro- and nanoelectronics systems, as well as in devices like Thin Film Transistors (TFT), planar waveguides, solar elements, and Light Emitted Diode (LED). The synthesis of such materials, alongside the acquisition of physical information. On their structural, optical, and electronic properties, is very important for the development of new stable devices based on them. The new special issue of “Materials” will include research articles and review papers written by leading scholars in field of materials science and technology. Actually, dielectrics have the thin layer created have good insulating qualities and an effective dielectric constant. Adapted single, binary, and perovskite oxides can be manufactured to provide dielectric materials with high dielectric constant. The benefits of using nanomaterial of using nanomaterial structures in energy storage devices with distinct performance are reviewed and discussed. The advancements in dielectric materials derived from a thin-materials methodology are assessed

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Published

2026-02-07

How to Cite

Agha, Firas Natheer, et al. “Review on Performance Perspectives of Dielectric Materials Used in Advanced Semiconductor Devices for Various Applications”. Kufa Journal of Engineering, vol. 17, no. 1, Feb. 2026, pp. 439-55, https://doi.org/10.30572/2018/KJE/170124.

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